60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes
A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of V<sub>F</sub> with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s...
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| Principais autores: | , , , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI AG
2021-01-01
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| Serier: | Sensors |
| Fag: | |
| Online adgang: | https://www.mdpi.com/1424-8220/21/3/942 |
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