Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges

A practical model, adequate for full reproduction of inhomogeneous Schottky diodes' forward characteristics over wide high-temperature and bias ranges, is proposed. According to this p-diode model, the Schottky contact current is considered to flow through m parallel-connected internal diodes, each...

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Hlavní autoři:	Gheorghe Brezeanu, Gheorghe Pristavu, Florin Draghici, Razvan Pascu, Francesco Della Corte, Simone Rascuna
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	IEEE 2020-01-01
Edice:	IEEE Journal of the Electron Devices Society
Témata:	Schottky diode parallel conduction inhomogeneity non-uniformity parameter silicon carbide
On-line přístup:	https://ieeexplore.ieee.org/document/9234459/
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