60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of V(F) with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout p...

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Bibliografische gegevens
Gepubliceerd in:Sensors (Basel)
Hoofdauteurs: Pascu, Razvan, Pristavu, Gheorghe, Brezeanu, Gheorghe, Draghici, Florin, Godignon, Philippe, Romanitan, Cosmin, Serbanescu, Matei, Tulbure, Adrian
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: MDPI 2021
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Article
Online toegang:https://ncbi.nlm.nih.gov/pmc/articles/PMC7866971/
https://ncbi.nlm.nih.gov/pubmed/33572603
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s21030942
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