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Boosting carrier mobility and stability in indium–zinc–tin oxide thin-film transistors through controlled crystallization
We investigated the effect of film thickness (geometrical confinement) on the structural evolution of sputtered indium-zinc-tin oxide (IZTO) films as high mobility n-channel semiconducting layers during post-treatment at different annealing temperatures ranging from 350 to 700 °C. Different thicknes...
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| Yayımlandı: | Sci Rep |
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| Asıl Yazarlar: | , , , , , , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Nature Publishing Group UK
2020
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| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7606507/ https://ncbi.nlm.nih.gov/pubmed/33139811 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-76046-w |
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