Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (μ(FE)), a lower subthreshold swing (SS), a positively shifted...

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Detaylı Bibliyografya
Yayımlandı:Micromachines (Basel)
Asıl Yazarlar: Shin, Min-Gyu, Bae, Kang-Hwan, Jeong, Hwan-Seok, Kim, Dae-Hwan, Cha, Hyun-Seok, Kwon, Hyuck-In
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: MDPI 2020
Konular:
Communication
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC7601644/
https://ncbi.nlm.nih.gov/pubmed/33008074
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11100917
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