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Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors
In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (μ(FE)), a lower subthreshold swing (SS), a positively shifted...
Tallennettuna:
| Julkaisussa: | Micromachines (Basel) |
|---|---|
| Päätekijät: | , , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
MDPI
2020
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7601644/ https://ncbi.nlm.nih.gov/pubmed/33008074 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11100917 |
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