Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors

We utilized Ni as a floating capping layer in p-channel SnO thin-film transistors (TFTs) to improve their electrical performances. By utilizing the Ni as a floating capping layer, the p-channel SnO TFT showed enhanced mobility as high as 10.5 cm(2)·V(−1)·s(−1). The increase in mobility was more sign...

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Vydáno v:Materials (Basel)
Hlavní autoři: Shin, Min-Gyu, Bae, Kang-Hwan, Cha, Hyun-Seok, Jeong, Hwan-Seok, Kim, Dae-Hwan, Kwon, Hyuck-In
Médium: Artigo
Jazyk:Inglês
Vydáno: MDPI 2020
Témata:
Communication
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC7411776/
https://ncbi.nlm.nih.gov/pubmed/32650540
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13143055
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