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Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors
We utilized Ni as a floating capping layer in p-channel SnO thin-film transistors (TFTs) to improve their electrical performances. By utilizing the Ni as a floating capping layer, the p-channel SnO TFT showed enhanced mobility as high as 10.5 cm(2)·V(−1)·s(−1). The increase in mobility was more sign...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2020
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7411776/ https://ncbi.nlm.nih.gov/pubmed/32650540 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13143055 |
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