Shin, M., Bae, K., Cha, H., Jeong, H., Kim, D., & Kwon, H. (2020). Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors. Materials (Basel).
استشهاد بنمط شيكاغوShin, Min-Gyu, Kang-Hwan Bae, Hyun-Seok Cha, Hwan-Seok Jeong, Dae-Hwan Kim, و Hyuck-In Kwon. "Floating Ni Capping for High-Mobility P-Channel SnO Thin-Film Transistors." Materials (Basel) 2020.
MLA استشهادShin, Min-Gyu, et al. "Floating Ni Capping for High-Mobility P-Channel SnO Thin-Film Transistors." Materials (Basel) 2020.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.