Carregant...

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (μ(FE)), a lower subthreshold swing (SS), a positively shifted...

Descripció completa

Guardat en:
Dades bibliogràfiques
Publicat a:Micromachines (Basel)
Autors principals: Shin, Min-Gyu, Bae, Kang-Hwan, Jeong, Hwan-Seok, Kim, Dae-Hwan, Cha, Hyun-Seok, Kwon, Hyuck-In
Format: Artigo
Idioma:Inglês
Publicat: MDPI 2020
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC7601644/
https://ncbi.nlm.nih.gov/pubmed/33008074
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11100917
Etiquetes: Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!