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Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory
In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method. To determine how the Li-doping concentration affects the crystal lattice structure in the composite ZnO thin films, X-r...
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| Publicado no: | Micromachines (Basel) |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7599982/ https://ncbi.nlm.nih.gov/pubmed/32987957 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11100889 |
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