Carregant...
Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory
In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method. To determine how the Li-doping concentration affects the crystal lattice structure in the composite ZnO thin films, X-r...
Guardat en:
| Publicat a: | Micromachines (Basel) |
|---|---|
| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2020
|
| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7599982/ https://ncbi.nlm.nih.gov/pubmed/32987957 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11100889 |
| Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|