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Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering
A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO(2)/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/A...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6515171/ https://ncbi.nlm.nih.gov/pubmed/31003535 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12081282 |
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