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Atomic-Resolution EDX, HAADF, and EELS Study of GaAs(1-x)Bi(x) Alloys
The distribution of alloyed atoms in semiconductors often deviates from a random distribution which can have significant effects on the properties of the materials. In this study, scanning transmission electron microscopy techniques are employed to analyze the distribution of Bi in several distinctl...
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| Vydáno v: | Nanoscale Res Lett |
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| Hlavní autoři: | , , , , , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer US
2020
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7248167/ https://ncbi.nlm.nih.gov/pubmed/32451638 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-03349-2 |
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