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Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes
GaAsBi is a suitable and very attractive material system to be used as an active layer in laser diodes (LDs). To understand the performance and the reliability of such devices and also for further laser diode improvements, the origin of noise sources should be clarified. A detailed study of near-inf...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6416598/ https://ncbi.nlm.nih.gov/pubmed/30813493 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12040673 |
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