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Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays
Selective area thermal etching (SATE) of gallium nitride is a simple subtractive process for creating novel device architectures and improving the structural and optical quality of III-nitride-based devices. In contrast to plasma etching, it allows, for example, the creation of enclosed features wit...
Tallennettuna:
| Julkaisussa: | Sci Rep |
|---|---|
| Päätekijät: | , , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Nature Publishing Group UK
2020
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7101372/ https://ncbi.nlm.nih.gov/pubmed/32221397 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-62539-1 |
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