A carregar...
Fundamental role of arsenic flux in nanohole formation by Ga droplet etching on GaAs(001)
Nanoholes with a depth in the range of tens of nanometers can be formed on GaAs(001) surfaces at a temperature of 500°C by local etching after Ga droplet formation. In this work, we demonstrate that the local etching or nanodrilling process starts when the Ga droplets are exposed to arsenic. The ess...
Na minha lista:
| Main Authors: | , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2014
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4071335/ https://ncbi.nlm.nih.gov/pubmed/24994962 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-309 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|