載入...
Fundamental role of arsenic flux in nanohole formation by Ga droplet etching on GaAs(001)
Nanoholes with a depth in the range of tens of nanometers can be formed on GaAs(001) surfaces at a temperature of 500°C by local etching after Ga droplet formation. In this work, we demonstrate that the local etching or nanodrilling process starts when the Ga droplets are exposed to arsenic. The ess...
Na minha lista:
| Main Authors: | , , |
|---|---|
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Springer
2014
|
| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4071335/ https://ncbi.nlm.nih.gov/pubmed/24994962 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-309 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|