טוען...
Fundamental role of arsenic flux in nanohole formation by Ga droplet etching on GaAs(001)
Nanoholes with a depth in the range of tens of nanometers can be formed on GaAs(001) surfaces at a temperature of 500°C by local etching after Ga droplet formation. In this work, we demonstrate that the local etching or nanodrilling process starts when the Ga droplets are exposed to arsenic. The ess...
שמור ב:
| Main Authors: | , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer
2014
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4071335/ https://ncbi.nlm.nih.gov/pubmed/24994962 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-309 |
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