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Role of Arsenic During Aluminum Droplet Etching of Nanoholes in AlGaAs
Self-assembled nanoholes are drilled into (001) AlGaAs surfaces during molecular beam epitaxy (MBE) using local droplet etching (LDE) with Al droplets. It is known that this process requires a small amount of background arsenic for droplet material removal. The present work demonstrates that the As...
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| 出版年: | Nanoscale Res Lett |
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| 主要な著者: | , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer US
2016
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5037105/ https://ncbi.nlm.nih.gov/pubmed/27671015 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1648-6 |
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