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Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ([Formula: see text]) and Non-Polar ([Formula: see text]) GaN Nanorods
The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density. However, very limited studies of nanotexturing via dry etching have...
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| Publicat a: | Nanomaterials (Basel) |
|---|---|
| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2020
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7766584/ https://ncbi.nlm.nih.gov/pubmed/33419314 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10122562 |
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