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Improved contacts to p-type MoS(2) transistors by charge-transfer doping and contact engineering
MoS(2) is known to show stubborn n-type behavior due to its intrinsic band structure and Fermi level pinning. Here, we investigate the combined effects of molecular doping and contact engineering on the transport and contact properties of monolayer (ML) MoS(2) devices. Significant p-type (hole-trans...
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| Udgivet i: | Appl Phys Lett |
|---|---|
| Main Authors: | , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
2019
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7047721/ https://ncbi.nlm.nih.gov/pubmed/32116333 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.5100154 |
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