Zhang, S., Le, S. T., Richter, C. A., & Hacker, C. A. (2019). Improved contacts to p-type MoS(2) transistors by charge-transfer doping and contact engineering. Appl Phys Lett.
Citação norma ChicagoZhang, Siyuan, Son T. Le, Curt A. Richter, and Christina A. Hacker. "Improved Contacts to P-type MoS(2) Transistors By Charge-transfer Doping and Contact Engineering." Appl Phys Lett 2019.
Citação norma MLAZhang, Siyuan, Son T. Le, Curt A. Richter, and Christina A. Hacker. "Improved Contacts to P-type MoS(2) Transistors By Charge-transfer Doping and Contact Engineering." Appl Phys Lett 2019.
Nota: a formatação da citação pode não corresponder 100% ao definido pela respectiva norma.