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Doping of MoTe(2) via surface charge-transfer in air
Doping is a key process by which the concentration and type of majority carriers can be tuned to achieve desired conduction properties. The common way of doping is via bulk impurities, as in the case of silicon. For van der Waals bonded semiconductors, control over bulk impurities is not as well dev...
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| Publicado no: | ACS Appl Mater Interfaces |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7425619/ https://ncbi.nlm.nih.gov/pubmed/32192325 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsami.0c04339 |
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