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Electronic Characteristics of MoSe(2) and MoTe(2) for Nanoelectronic Applications
Single-crystalline MoSe(2) and MoTe(2) platelets were grown by Chemical Vapor Transport (CVT), followed by exfoliation, device fabrication, optical and electrical characterization. We observed that for the field-effect-transistor (FET) channel thickness in range of 5.5 nm to 8.5 nm, MoTe(2) shows p-...
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| Vydáno v: | IEEE Trans Electron Devices |
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| Hlavní autoři: | , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
2018
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7673224/ https://ncbi.nlm.nih.gov/pubmed/33214729 |
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