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Electronic Characteristics of MoSe(2) and MoTe(2) for Nanoelectronic Applications

Single-crystalline MoSe(2) and MoTe(2) platelets were grown by Chemical Vapor Transport (CVT), followed by exfoliation, device fabrication, optical and electrical characterization. We observed that for the field-effect-transistor (FET) channel thickness in range of 5.5 nm to 8.5 nm, MoTe(2) shows p-...

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Pubblicato in:IEEE Trans Electron Devices
Autori principali: Rani, Asha, Guo, Shiqi, Krylyuk, Sergiy, DiCamillo, Kyle, Debnath, Ratan, Davydov, Albert V., Zaghloul, Mona E.
Natura: Artigo
Lingua:Inglês
Pubblicazione: 2018
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Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC7673224/
https://ncbi.nlm.nih.gov/pubmed/33214729
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