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In situ transport measurements reveal source of mobility enhancement of MoS(2) and MoTe(2) during dielectric deposition
Layered transition metal dichalcogenides (TMDs) and other two-dimensional (2D) materials are promising candidates for enhancing the capabilities of complementary metal-oxide-semiconductor (CMOS) technology. Field-effect transistors (FETs) made with 2D materials often exhibit mobilities below their t...
Tallennettuna:
| Julkaisussa: | ACS Appl Electron Mater |
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| Päätekijät: | , , , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
2020
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7727257/ https://ncbi.nlm.nih.gov/pubmed/33313511 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsaelm.0c00085 |
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