Načítá se...
Doping of MoTe(2) via surface charge-transfer in air
Doping is a key process by which the concentration and type of majority carriers can be tuned to achieve desired conduction properties. The common way of doping is via bulk impurities, as in the case of silicon. For van der Waals bonded semiconductors, control over bulk impurities is not as well dev...
Uloženo v:
| Vydáno v: | ACS Appl Mater Interfaces |
|---|---|
| Hlavní autoři: | , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
2020
|
| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7425619/ https://ncbi.nlm.nih.gov/pubmed/32192325 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsami.0c04339 |
| Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!
|