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Ultrashort Vertical‐Channel van der Waals Semiconductor Transistors
Atomically thin 2D van der Waals semiconductors are promising candidates for next‐generation nanoscale field‐effect transistors (FETs). Although large‐area 2D van der Waals materials have been successfully synthesized, such nanometer‐length‐scale devices have not been well demonstrated in 2D van der...
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| Pubblicato in: | Adv Sci (Weinh) |
|---|---|
| Autori principali: | , , , , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
John Wiley and Sons Inc.
2019
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7029639/ https://ncbi.nlm.nih.gov/pubmed/32099767 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201902964 |
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