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Ultrashort Vertical‐Channel van der Waals Semiconductor Transistors
Atomically thin 2D van der Waals semiconductors are promising candidates for next‐generation nanoscale field‐effect transistors (FETs). Although large‐area 2D van der Waals materials have been successfully synthesized, such nanometer‐length‐scale devices have not been well demonstrated in 2D van der...
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| Publicado no: | Adv Sci (Weinh) |
|---|---|
| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
John Wiley and Sons Inc.
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7029639/ https://ncbi.nlm.nih.gov/pubmed/32099767 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201902964 |
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