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Ultrashort Vertical‐Channel van der Waals Semiconductor Transistors

Atomically thin 2D van der Waals semiconductors are promising candidates for next‐generation nanoscale field‐effect transistors (FETs). Although large‐area 2D van der Waals materials have been successfully synthesized, such nanometer‐length‐scale devices have not been well demonstrated in 2D van der...

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Détails bibliographiques
Publié dans:Adv Sci (Weinh)
Auteurs principaux: Jiang, Jinbao, Doan, Manh‐Ha, Sun, Linfeng, Kim, Hyun, Yu, Hua, Joo, Min‐Kyu, Park, Sang Hyun, Yang, Heejun, Duong, Dinh Loc, Lee, Young Hee
Format: Artigo
Langue:Inglês
Publié: John Wiley and Sons Inc. 2019
Sujets:
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC7029639/
https://ncbi.nlm.nih.gov/pubmed/32099767
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201902964
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