Ultrashort Vertical‐Channel van der Waals Semiconductor Transistors

Atomically thin 2D van der Waals semiconductors are promising candidates for next‐generation nanoscale field‐effect transistors (FETs). Although large‐area 2D van der Waals materials have been successfully synthesized, such nanometer‐length‐scale devices have not been well demonstrated in 2D van der...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Adv Sci (Weinh)
Päätekijät: Jiang, Jinbao, Doan, Manh‐Ha, Sun, Linfeng, Kim, Hyun, Yu, Hua, Joo, Min‐Kyu, Park, Sang Hyun, Yang, Heejun, Duong, Dinh Loc, Lee, Young Hee
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: John Wiley and Sons Inc. 2019
Aiheet:
Communications
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC7029639/
https://ncbi.nlm.nih.gov/pubmed/32099767
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201902964
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