Ultrashort Vertical‐Channel van der Waals Semiconductor Transistors

Atomically thin 2D van der Waals semiconductors are promising candidates for next‐generation nanoscale field‐effect transistors (FETs). Although large‐area 2D van der Waals materials have been successfully synthesized, such nanometer‐length‐scale devices have not been well demonstrated in 2D van der...

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Vydáno v:Adv Sci (Weinh)
Hlavní autoři: Jiang, Jinbao, Doan, Manh‐Ha, Sun, Linfeng, Kim, Hyun, Yu, Hua, Joo, Min‐Kyu, Park, Sang Hyun, Yang, Heejun, Duong, Dinh Loc, Lee, Young Hee
Médium: Artigo
Jazyk:Inglês
Vydáno: John Wiley and Sons Inc. 2019
Témata:
Communications
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC7029639/
https://ncbi.nlm.nih.gov/pubmed/32099767
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201902964
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