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Influence of Annealing Atmosphere on the Characteristics of Ga(2)O(3)/4H-SiC n-n Heterojunction Diodes
Ga(2)O(3)/4H-SiC n-n isotype heterojunction diodes were fabricated by depositing Ga(2)O(3) thin films by RF magnetron sputtering. The influence of annealing atmosphere on the film quality and electrical properties of Ga(2)O(3) layers was investigated. X-ray diffraction (XRD) analysis showed a signif...
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| Wydane w: | Materials (Basel) |
|---|---|
| Główni autorzy: | , , , |
| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
MDPI
2020
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| Hasła przedmiotowe: | |
| Dostęp online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7013600/ https://ncbi.nlm.nih.gov/pubmed/31963320 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13020434 |
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