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Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes
This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n-ZnO/p-GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The ori...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5458876/ https://ncbi.nlm.nih.gov/pubmed/28793675 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma8115417 |
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