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Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes

This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n-ZnO/p-GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The ori...

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Bibliografiska uppgifter
I publikationen:Materials (Basel)
Huvudupphovsmän: Hsu, Kai-Chiang, Hsiao, Wei-Hua, Lee, Ching-Ting, Chen, Yan-Ting, Liu, Day-Shan
Materialtyp: Artigo
Språk:Inglês
Publicerad: MDPI 2015
Ämnen:
Länkar:https://ncbi.nlm.nih.gov/pmc/articles/PMC5458876/
https://ncbi.nlm.nih.gov/pubmed/28793675
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma8115417
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