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High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field
Metal-assisted chemical etching (MaCE), a low-cost and versatile method was considered a promising technique for preparing silicon nanowires (SiNWs), yet the lack of well controlling the injected holes within Si might reduce the etching rate, create the unwanted sidewall etching, and degrade the str...
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| 出版年: | Nanoscale Res Lett |
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| 主要な著者: | , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer US
2020
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6990330/ https://ncbi.nlm.nih.gov/pubmed/32002703 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-3259-5 |
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