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Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach
Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize th...
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| Vydáno v: | Nanoscale Res Lett |
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| Hlavní autoři: | , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer US
2016
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5073083/ https://ncbi.nlm.nih.gov/pubmed/27766607 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1689-x |
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