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The mechanism of galvanic/metal-assisted etching of silicon
Metal-assisted etching is initiated by hole injection from an oxidant catalyzed by a metal nanoparticle or film on a Si surface. It is shown that the electronic structure of the metal/Si interface, i.e., band bending, is not conducive to diffusion of the injected hole away from the metal in the case...
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer
2014
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4149979/ https://ncbi.nlm.nih.gov/pubmed/25221459 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-432 |
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