Ładuje się......
The mechanism of galvanic/metal-assisted etching of silicon
Metal-assisted etching is initiated by hole injection from an oxidant catalyzed by a metal nanoparticle or film on a Si surface. It is shown that the electronic structure of the metal/Si interface, i.e., band bending, is not conducive to diffusion of the injected hole away from the metal in the case...
Zapisane w:
| 1. autor: | |
|---|---|
| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
Springer
2014
|
| Hasła przedmiotowe: | |
| Dostęp online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4149979/ https://ncbi.nlm.nih.gov/pubmed/25221459 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-432 |
| Etykiety: |
Dodaj etykietę
Nie ma etykietki, Dołącz pierwszą etykiete!
|