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Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching
Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO(3). Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum reflecta...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5483226/ https://ncbi.nlm.nih.gov/pubmed/28651386 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2197-3 |
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