ロード中...
Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers
This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epit...
保存先:
| 出版年: | Materials (Basel) |
|---|---|
| 主要な著者: | , , , , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2019
|
| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6829506/ https://ncbi.nlm.nih.gov/pubmed/31618862 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12203362 |
| タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|