Nalaganje...
Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers
In this work, results related to the temperature influence on the homo-epitaxial growth process of 3C-SiC is presented. The seed for the epitaxial layer was obtained by an innovative technique based on silicon melting: after the first step of the hetero-epitaxial growth process of 3C-SiC on a Si sub...
Shranjeno v:
| izdano v: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI
2019
|
| Teme: | |
| Online dostop: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6829424/ https://ncbi.nlm.nih.gov/pubmed/31658766 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12203293 |
| Oznake: |
Označite
Brez oznak, prvi označite!
|