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Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers
This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epit...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6829506/ https://ncbi.nlm.nih.gov/pubmed/31618862 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12203362 |
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