A carregar...
Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers
In this work, results related to the temperature influence on the homo-epitaxial growth process of 3C-SiC is presented. The seed for the epitaxial layer was obtained by an innovative technique based on silicon melting: after the first step of the hetero-epitaxial growth process of 3C-SiC on a Si sub...
Na minha lista:
| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2019
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6829424/ https://ncbi.nlm.nih.gov/pubmed/31658766 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12203293 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|