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High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate
We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift...
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| Pubblicato in: | Nanomaterials (Basel) |
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| Autori principali: | , , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2019
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6724084/ https://ncbi.nlm.nih.gov/pubmed/31426467 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9081178 |
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