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The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes
The development of efficient green light-emitting diodes (LEDs) is of paramount importance for the realization of colour-mixing white LEDs with a high luminous efficiency. While the insertion of an InGaN/GaN superlattice (SL) with a lower In content before the growth of InGaN/GaN multiple quantum we...
Guardat en:
| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2018
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6056468/ https://ncbi.nlm.nih.gov/pubmed/30038360 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-29440-4 |
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