Načítá se...
Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes
An efficiency droop in GaN-based light-emitting diodes (LED) was characterized by examining its general thermophysical parameters. An effective suppression of emission degradation afforded by the introduction of InGaN/GaN heterobarrier structures in the active region was attributable to an increase...
Uloženo v:
| Vydáno v: | Nanomaterials (Basel) |
|---|---|
| Hlavní autoři: | , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2021
|
| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8227426/ https://ncbi.nlm.nih.gov/pubmed/34070771 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11061449 |
| Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!
|