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Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes
An efficiency droop in GaN-based light-emitting diodes (LED) was characterized by examining its general thermophysical parameters. An effective suppression of emission degradation afforded by the introduction of InGaN/GaN heterobarrier structures in the active region was attributable to an increase...
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| 發表在: | Nanomaterials (Basel) |
|---|---|
| Main Authors: | , , , , |
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
MDPI
2021
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| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8227426/ https://ncbi.nlm.nih.gov/pubmed/34070771 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11061449 |
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