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Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes
We demonstrated two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with distributed Bragg reflector (DBR) and without DBR to investigate the effect of dielectric TiO(2)/SiO(2) DBR on optical and electrical characteristics of FCLEDs. The reflector consisting of two single TiO(2)/SiO(2) D...
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| Publicado no: | Micromachines (Basel) |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6316428/ https://ncbi.nlm.nih.gov/pubmed/30544773 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi9120650 |
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