The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes

The development of efficient green light-emitting diodes (LEDs) is of paramount importance for the realization of colour-mixing white LEDs with a high luminous efficiency. While the insertion of an InGaN/GaN superlattice (SL) with a lower In content before the growth of InGaN/GaN multiple quantum we...

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Udgivet i:Sci Rep
Main Authors: Zhou, Shengjun, Liu, Xingtong, Yan, Han, Gao, Yilin, Xu, Haohao, Zhao, Jie, Quan, Zhijue, Gui, Chengqun, Liu, Sheng
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group UK 2018
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Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6056468/
https://ncbi.nlm.nih.gov/pubmed/30038360
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-29440-4
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