Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

We present the combined analysis of electroluminescence (EL) and current–voltage (I–V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron mi...

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Detalhes bibliográficos
Publicado no:Beilstein J Nanotechnol
Main Authors: van Treeck, David, Ledig, Johannes, Scholz, Gregor, Lähnemann, Jonas, Musolino, Mattia, Tahraoui, Abbes, Brandt, Oliver, Waag, Andreas, Riechert, Henning, Geelhaar, Lutz
Formato: Artigo
Idioma:Inglês
Publicado em: Beilstein-Institut 2019
Assuntos:
Full Research Paper
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6604741/
https://ncbi.nlm.nih.gov/pubmed/31293855
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.10.117
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