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A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications
Leakage interference between memory cells is the primary obstacle for enlarging X‐point memory arrays. Metal‐filament threshold switches, possessing excellent selectivity and low leakage current, are developed in series with memory cells to reduce sneak path current and lower power consumption. Howe...
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| 發表在: | Adv Sci (Weinh) |
|---|---|
| Main Authors: | , , , , , , , , , |
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
John Wiley and Sons Inc.
2019
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| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6524079/ https://ncbi.nlm.nih.gov/pubmed/31131198 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201900024 |
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