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A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications
Leakage interference between memory cells is the primary obstacle for enlarging X‐point memory arrays. Metal‐filament threshold switches, possessing excellent selectivity and low leakage current, are developed in series with memory cells to reduce sneak path current and lower power consumption. Howe...
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| Yayımlandı: | Adv Sci (Weinh) |
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| Asıl Yazarlar: | , , , , , , , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
John Wiley and Sons Inc.
2019
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| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6524079/ https://ncbi.nlm.nih.gov/pubmed/31131198 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201900024 |
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