A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications

Leakage interference between memory cells is the primary obstacle for enlarging X‐point memory arrays. Metal‐filament threshold switches, possessing excellent selectivity and low leakage current, are developed in series with memory cells to reduce sneak path current and lower power consumption. Howe...

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Опубликовано в: :Adv Sci (Weinh)
Главные авторы: Hua, Qilin, Wu, Huaqiang, Gao, Bin, Zhao, Meiran, Li, Yujia, Li, Xinyi, Hou, Xiang, (Marvin) Chang, Meng‐Fan, Zhou, Peng, Qian, He
Формат: Artigo
Язык:Inglês
Опубликовано: John Wiley and Sons Inc. 2019
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Full Papers
Online-ссылка:https://ncbi.nlm.nih.gov/pmc/articles/PMC6524079/
https://ncbi.nlm.nih.gov/pubmed/31131198
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201900024
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