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Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory

The bottom-up approach using self-assembled materials/processes is thought to be a promising solution for next-generation device fabrication, but it is often found to be not feasible for use in real device fabrication. Here, we report a feasible and versatile way to fabricate high-density, nanoscale...

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Detalles Bibliográficos
Publicado en:Sci Rep
Main Authors: Han, Un-Bin, Lee, Jang-Sik
Formato: Artigo
Idioma:Inglês
Publicado: Nature Publishing Group 2016
Assuntos:
Acceso en liña:https://ncbi.nlm.nih.gov/pmc/articles/PMC4860564/
https://ncbi.nlm.nih.gov/pubmed/27157385
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep25537
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