A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications

Leakage interference between memory cells is the primary obstacle for enlarging X‐point memory arrays. Metal‐filament threshold switches, possessing excellent selectivity and low leakage current, are developed in series with memory cells to reduce sneak path current and lower power consumption. Howe...

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Dades bibliogràfiques
Publicat a:Adv Sci (Weinh)
Autors principals: Hua, Qilin, Wu, Huaqiang, Gao, Bin, Zhao, Meiran, Li, Yujia, Li, Xinyi, Hou, Xiang, (Marvin) Chang, Meng‐Fan, Zhou, Peng, Qian, He
Format: Artigo
Idioma:Inglês
Publicat: John Wiley and Sons Inc. 2019
Matèries:
Full Papers
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC6524079/
https://ncbi.nlm.nih.gov/pubmed/31131198
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201900024
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