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High‐Uniformity Threshold Switching HfO(2)‐Based Selectors with Patterned Ag Nanodots
High‐performance selector devices are essential for emerging nonvolatile memories to implement high‐density memory storage and large‐scale neuromorphic computing. Device uniformity is one of the key challenges which limit the practical applications of threshold switching selectors. Here, high‐unifor...
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| Publicat a: | Adv Sci (Weinh) |
|---|---|
| Autors principals: | , , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
John Wiley and Sons Inc.
2020
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7675059/ https://ncbi.nlm.nih.gov/pubmed/33240773 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.202002251 |
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